The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO6604
AO6604 Datasheet N- and P-Channel 20V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
N-Channel
VDS (V) 20
RDS(on) (Ω) 0.022 at VGS = 10 V 0.036 at VGS = 4.5 V
P-Channel
- 20
0.030 at VGS = - 10 V
0.079 at VGS = - 4.5 V
ID (A) 5.5 4.2 - 3.4 - 2.5
TSOP-6 Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
D1
S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
5.5
- 3.
AO6604 Datasheet
