AO6802 Datasheet
AO6802 Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10.
v 3.1: August 2023 Page 1 of 5 AO6802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS.
AO6802 Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type Dual N-Channel MOSFET AO6802 (KO6802) MOSFET ■ Features ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON) ＜ 50mΩ (VGS = 10V) ● RDS(ON) ＜ 70mΩ (VGS = 4.5V) D1 D2 G1 G2 S1 S2 ( SOT-23.
* VDS (V) = 30V
* ID =3.5 A (VGS = 10V)
* RDS(ON) ＜ 50mΩ (VGS = 10V)
* RDS(ON) ＜ 70mΩ (VGS = 4.5V)
D1
D2
G1
G2
S1
S2
( SOT-23-6 ) 0.4+0.1
-0.1
6
5
4
0.4
Unit: mm
+0.2 1.6 -0.1
+0.2 2.8 -0.1
0.55
1
2
3
+0.01 -0.01 +0.2 -0.1
0.15 +0.02 -0.02
+0.1 1.1 -0.1
1 Gate1 4 Drain2 2 Source.
AO6802 Datasheet (UMW)
UMW
The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. 2.Product Summary VDS (V)=30V RDS.
-to-Lead UMW AO6802 Dual 30V N-ChanneI MOSFET Symbol Typ t ≤ 10s 78 RθJA Steady-State 150 Steady-State RθJL 64 Max 110 150 80 Units °C/W °C/W °C/W 2 of 10 UTD Semiconductor Co.,Limited Nov.2024 UMW AO6802 Dual 30V N-ChanneI MOSFET 6.Electrical Characteristic (TJ=25°C u.
AO6802 Datasheet (Freescale Semiconductor)
Freescale Semiconductor
Freescale N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal f.
GS TA=25oC TA=70oC ID IDM 30 V ±20 3.5 2.8 A 16 Continuous Source Current (Diode Conduction)a IS 1.25 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 1.3 W 0.8 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to.