AOB298L Datasheet
AOB298L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 58A/33A < 14.5mΩ Applications • Synchronus Rectification in DC/DC .
IAS, IAR EAS, EAR VSPIKE 9 7 20 20 120 TC=25°C Power Dissipation B TC=100°C PD 100 33 50 16 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.33 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambie.
AOB298L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Drain Current ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be idea.
TER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IS=1A ; VGS= 0 VGS= 10V; ID=20A VG.