| Part Number | AOD2N60 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applic. ove 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S DG G Maximum 600 ±30 2 1.4 8 2 60 120 5 56.8 0.45 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink. |
AOD2N60 Datasheet and Specifications PDF
The AOD2N60 is a 2A N-Channel MOSFET.
| Part Number | AOD2N60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID= 2A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) =4.4Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and g. |