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AOI4T60P Datasheet

The AOI4T60P is a 4A N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberAOI4T60P
ManufacturerAlpha & Omega Semiconductors
Overview • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Ap. ak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 4 2.4 16 4 8 203 50 5 83 0.7 -55 to 150 300 Uni.
Part NumberAOI4T60P
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
  –ID= 4.0A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and.

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