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AOTF11S65 Datasheet

The AOTF11S65 is a 650V 11A Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberAOTF11S65
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robu. urrent C IAR 2 Repetitive avalanche energy C EAR 60 Single pulsed avalanche energy G EAS 120 TC=25°C Power Dissipation B Derate above 25oC PD 198 39 1.6 0.31 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150.
Part NumberAOTF11S65
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source.
*Drain Current
  –ID=11A@ TC=25℃
*Drain Source Voltage- : VDSS=650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies an.
Part NumberAOTF11S65
DescriptionPower Transistor
ManufacturerAlpha & Omega Semiconductors
Overview The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. S65 650 ±30 11* 8* 45 2 60 120 AOTF11S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT11S65/AOB11S65 65 0.5 0.63 198 1.6 11 8 11* 8* A A mJ mJ 31 0.25 W W/ oC V/ns ° C ° C AOTF11S65L 65 -4 Units ° C/W ° C/W ° C/W Single pulsed avalanche energy G TC=25.
Part NumberAOTF11S65
DescriptionPower Transistor
ManufacturerFreescale Semiconductor
Overview The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive .

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Part Number Manufacturer Description
AOTF11S65L Alpha & Omega Semiconductors 650V 11A Power Transistor