| Part Number | AOTF2210L Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) Applicati. cteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.4 G Form Tube S Minimum Order Quantity 1000 Maximum 200 ±20 13 9 45 6.5 5.0 9 4 240 36.5 18 8.3 5.3 -55 to 175 Unit. |
AOTF2210L Datasheet and Specifications PDF
The AOTF2210L is a N-Channel MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | AOTF2210L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
AOTF2210L
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
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*With low gate drive requirements *Easy to drive *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID ID. |