Datasheet4U Logo Datasheet4U.com

AOTF2210L - N-Channel MOSFET

Datasheet Summary

Features

  • With low gate drive requirements.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOTF2210L

Datasheet Details

Part number AOTF2210L
Manufacturer INCHANGE
File Size 196.61 KB
Description N-Channel MOSFET
Datasheet download datasheet AOTF2210L Datasheet
Additional preview pages of the AOTF2210L datasheet.

📁 Similar Datasheet

  • AOTF2210L - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF22N50 - 22A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF20C60 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF20N40 - 20A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF20N40L - 20A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF20N60 - 20A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF20S60 - Power Transistor (Alpha & Omega Semiconductors)
  • AOTF20S60L - Power Transistor (Alpha & Omega Semiconductors)
  • AOTF2142L - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOTF2144L - 40V N-Channel MOSFET (Alpha & Omega Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF2210L ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 13 9 45 PD Total Dissipation 18 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.1 UNIT ℃/W isc website：www.iscsemi.
Published: |