Datasheet Details
| Part number | AOTF2210L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF2210L-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF2210L 200V N-Channel MOSFET General.
| Part number | AOTF2210L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF2210L-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 200V 13A < 90mΩ < 106mΩ D G DS S DG Orderable Part Number AOTF2210L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.4 G Form Tube S Minimum Order Quantity 1000 Maximum 200 ±20 13 9 45 6.5 5.0 9 4 240 36.5 18 8.3 5.3 -55 to 175 Units V V A A A mJ V W W °C Max Units 15 °C/W 55 °C/W 4.1 °C/W Rev.1.0: November 2014 .aosmd.
Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=200V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=13A Forward Transconductance Diode Forward Voltage VGS=5V, ID=11A VDS=5V, ID=13A IS=1A,VGS=0V Maximum Body-Diode Continuous Current 200 TJ=55°C 1.5 TJ=125°C DYNAMIC PARAMETERS Ciss Inp
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF2210L | N-Channel MOSFET | INCHANGE |
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