| Part Number | AOW66412 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applic. mperature Range TJ, TSTG Maximum 40 ±20 120 120 600 45 36 60 540 260 104 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 55 Maximum Junction-to-Case Steady. |
AOW66412 Datasheet and Specifications PDF
The AOW66412 is a N-Channel MOSFET.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | AOW66412 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
40
V
VGS
Gate-Source .
*Drain Current *ID=120A@ TC=25℃ *Drain Source Voltage- : VDSS=40V(Min) *Static Drain-Source On-Resistance : RDS(on) =1.9Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and ge. |