The AP2306GN-HF is a N-Channel MOSFET.
| Part Number | AP2306GN-HF Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
AP2306GN-HF-VB
AP2306GN-HF-VB Datasheet
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
ID (A).
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converters * Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So. |
| Part Number | AP2306GN-HF Datasheet |
|---|---|
| Description | N-channel enhancement mode power MOSFET |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for a. Unit ℃/W Data and specifications subject to change without notice 1 200902044 Free Datasheet AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 T. |
| Seller | Inventory | Price Breaks | Buy |
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| UnikeyIC | 400000 | 500+ : 0.026 USD 1000+ : 0.0256 USD 1500+ : 0.025 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| AP2306GN-HF-3 | Advanced Power Electronics Corp | N-channel Enhancement-mode Power MOSFET |
| AP2306GN | VBsemi | N-Channel MOSFET |
| AP2306GN | Advanced Power Electronics Corp | N-channel enhancement mode power MOSFET |