| Part Number | AP2306GN Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
AP2306GN
AP2306GN Datasheet
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
ID (A)e 6a 6a 5..
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converters * Load Switch for Portable Applications G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parame. |
AP2306GN Datasheet PDF
The AP2306GN is a N-Channel MOSFET.
| Part Number | AP2306GN Datasheet |
|---|---|
| Description | N-channel enhancement mode power MOSFET |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is univer. mal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200509032 AP2306GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA. |