| Part Number | AP75T10GP-HF Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
AP75T10GP-HF-VB
AP75T10GP-HF-VB Datasheet
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.017 at VGS = 10 V
ID (A) 70a
TO-220AB
FEATURES • TrenchFET.
* TrenchFET® Power MOSFET * 175 °C Junction Temperature * Low Thermal Resistance Package * 100 % Rg Tested APPLICATIONS * Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Vol. |
AP75T10GP-HF Datasheet and Specifications PDF
The AP75T10GP-HF is a N-Channel 100V MOSFET.
| Part Number | AP75T10GP-HF Datasheet |
|---|---|
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely pref. r Derating Factor 100 +20 65 41 260 138 1.11 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient . |