APT18M80B Datasheet
APT18M80B Datasheet (Microsemi)
Microsemi
APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliabilit.
* Fast switching with low EMI/RFI
* Low RDS(on)
* Ultra low Crss for improved noise immunity
* Low gate charge
* Avalanche energy rated
* RoHS compliant
TYPICAL APPLICATIONS
* PFC and other boost converter
* Buck converter
* Two switch forward (asymmetrical bridge)
* Single switch forward
* Flyback.
APT18M80B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Sourc.
*Drain Current
*ID=19A@ TC=25℃
*Drain Source Voltage-
: VDSS=800V(Min)
*Static Drain-Source On-Resistance
: RDS(on) =0.53Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies and .