| Part Number | APT20M38BVR Datasheet |
|---|---|
| Manufacturer | Advanced Power Technology |
| Overview | APT20M38BVR 200V 67A 0.038Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing d. n-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volt. |
APT20M38BVR Datasheet and Specifications PDF
The APT20M38BVR is a N-Channel MOSFET.
Key Specifications
| Package | TO-247 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | APT20M38BVR Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Sourc.
*Drain Current *ID=67A@ TC=25℃ *Drain Source Voltage- : VDSS=200V(Min) *Static Drain-Source On-Resistance : RDS(on) =0.038Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |