AUIRF7341Q Datasheet
AUIRF7341Q Datasheet (Infineon)
Infineon
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
* Advanced Planar Technology
* Ultra Low On-Resistance
* Logic Level Gate Drive
* Dual N Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* 175°C Operating Temperature
* Lead-Free, RoHS Compliant
* Automotive Qualified *
S1
G1 S2 G2
1 2 3 4
8 D1 7 D1 6 D2 5 D2
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AUIRF7341Q Datasheet (International Rectifier)
International Rectifier
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 V(BR)DSS RDS(on) typ. 55V 0.043Ω 6 5 max. 0.050Ω I.