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AUIRF7341Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 V(BR)DSS RDS(on) typ. 55V 0.043Ω 6 5 max. 0.050Ω ID 5.1A Top View.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7341Q Dual N-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE MOSFET PD - 96362A AUIRF7341Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 V(BR)DSS RDS(on) typ. 55V 0.043Ω 6 5 max. 0.050Ω ID 5.1A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.