Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Features
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Advanced Planar Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant
S1 G1 S2 G2
1 2 3 4
D1 D1 D2 D2
V(BR)DSS RDS(on) typ. 55V 0.043Ω
6 5
max. 0.050Ω ID 5.1A
Top View.
AUIRF7341Q Datasheet
