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AUIRF7343Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 N-.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7343Q Dual N/P-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE MOSFET PD - 96343B Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 AUIRF7343Q N-Ch P-Ch -55V V(BR)DSS RDS(on) typ. 55V Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified* Lead-Free, RoHS Compliant D1 D1 D2 D2 0.043Ω 0.095Ω P-CHANNEL MOSFET max. 0.050Ω 0.105Ω ID 4.7A -3.4A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.