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AUIRF7342Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7342Q Dual P-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97640 AUTOMOTIVE GRADE ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dual P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* AUIRF7342Q S1 G1 S2 G2 1 2 3 4 8 7 HEXFET® Power MOSFET D1 D1 D2 D2 V(BR)DSS RDS(on) max. ID -55V 0.105Ω -3.4A 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.