The AUIRF9952Q is a Power MOSFET.
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Height | 1.5 mm |
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | AUIRF9952Q Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c. l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* S1 G1 S2 G2 N-CHANNEL MOSFET . |
| Part Number | AUIRF9952Q Datasheet |
|---|---|
| Description | Dual N/P-Channel MOSFET |
| Manufacturer | Infineon |
| Overview |
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c.
* Advanced Planar Technology * Low On-Resistance * Logic Level Gate Drive * Dual N and P Channel MOSFET * Dynamic dv/dt Rating * 150°C Operating Temperature * Fast Switching * Full Avalanche Rated * Repetitive Avalanche Allowed up to Tjmax * Lead-Free, RoHS Compliant * Automotive Qualified * S1 . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 42343 | 100+ : 0.6729 USD 500+ : 0.6056 USD 1000+ : 0.5585 USD 10000+ : 0.4979 USD |
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| RS (Formerly Allied Electronics) | 0 | 125+ : 1.25 USD 250+ : 1.222 USD 625+ : 1.185 USD 1250+ : 1.134 USD |
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| Win Source | 5 | 35+ : 1.632 USD 75+ : 1.3391 USD 120+ : 1.2973 USD 160+ : 1.2554 USD |
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