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AUIRF9952Q - Dual N/P-Channel MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N and P Channel MOSFET.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Full Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 N-.

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Datasheet Details

Part number AUIRF9952Q
Manufacturer Infineon
File Size 307.02 KB
Description Dual N/P-Channel MOSFET
Datasheet download datasheet AUIRF9952Q Datasheet
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  AUTOMOTIVE GRADE AUIRF9952Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Full Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 N-CHANNEL MOSFET 18 D1 N-CH P-CH G1 2 S2 3 V7 D1 DSS 6 D2 30V -30V G2 4 5 D2 RDS(on) max. 0.10 0.25 P-CHANNEL MOSFET Top View ID 3.5A -2.3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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