Datasheet Summary
AUTOMOTIVE GRADE
Features
- Advanced Planar Technology
- Low On-Resistance
- Logic Level Gate Drive
- Dual N and P Channel MOSFET
- Dynamic dv/dt Rating
- 150°C Operating Temperature
- Fast Switching
- Full Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS pliant
- Automotive Qualified
-
S1
N-CHANNEL MOSFET 18
D1
N-CH P-CH
G1 2 S2 3
V7 D1
6 D2
30V -30V
G2 4
5 D2 RDS(on) max. 0.10 0.25
P-CHANNEL MOSFET
Top View
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area....
