AUIRFU540Z Datasheet
AUIRFU540Z Datasheet (International Rectifier)
International Rectifier
AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z HEXFET® Power MOSFET D D S S VDSS RDS(on) typ. max. ID 100V 22.5m 28.5m 35A G S G D G D-Pak IRFR540ZPbF I-Pak IRFU540ZPbF Applications l Automatic Volt.
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. I D @ TC = 25°C I D @ TC = 100°C I DM PD @TC = 25°C VGS EAS EAS (tested ) I AR EAR TJ TSTG Parameter Continuous Drain Current, V GS @ 10V (Silicon Lim.
AUIRFU540Z Datasheet (Infineon)
Infineon
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.
of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS RDS(on) .