BAS19LT1 Datasheet
BAS19LT1 Datasheet (WEJ)
WEJ
SWITCHING DIODE RoHS BAS19LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 120V .,LOperating and storage junction temperature range Tj, Tstg : -.
Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 120V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR COANODE-CATHODE 3 IC1 2 ANODE CATHODE Marking:JP 2.9 1.9 0.95 0.95 0..
BAS19LT1 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS19LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS19LT1 Motorola Preferred Device MAXIMUM RATINGS Rati.
100 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 1. FR
* 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. IR
*
* V(B.