| Part Number | BAT14-099 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview |
Silicon Dual Schottky Diode
DBS mixer application to 12 GHz q Low noise figure q Medium barrier type
q
BAT 14-099
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BA.
apacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF * * ∆VF Values typ. * max. * 4 Unit V 0.43 0.55 * * 5.5 * * 10 0.35 * mV pF Ω * * * CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on. |
BAT14-099 Datasheet and Specifications PDF
The BAT14-099 is a Silicon Dual Schottky Diode.
| Part Number | BAT14-099 Datasheet |
|---|---|
| Description | Silicon Dual Schottky Diode |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon Dual Schottky Diode BAT14-099 SOT-143 2.90±0.1 Diodes 1.30±0.1 Unit:mm X 1.00±0.1 0.1(max) 0.55 (max) 0.45 (min) 0.15 (max) 0.09 (min) Features DBS mixer application to 12 GHz L. DBS mixer application to 12 GHz Low noise figure Medium barrier type 4 3 D1 D2 1 2 0~0.1 1.90 (Typ) 4 0.48 (max) 0.38 (min) 3 2.30±0.2 1 0.88 (max) 0.78 (min) 2 1.70 (Typ) 0.45 (max) 0.15 (min) detail X Absolute Maxim um Ratings Ta = 25 P aram eter Reverse voltage Forward current Power. |