BAT62-08S Datasheet
BAT62-08S Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type Silicon Schottky Diode BAT62-08S;BAT62-09S Diodes Features Low barrier diode for detectors up to GHz frequencies SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.15 2.3 -0.15 0.36 0.3+0.1.
Low barrier diode for detectors up to GHz frequencies SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.15 2.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0.1 1.25 -0.1 0.1max +0.05 0.95 -0.05 Absolute Maxim um Ratings Ta = 25 P aram eter Symbol Rating Diode reverse voltage VRM 4.
BAT62-08S Datasheet (Infineon)
Infineon
BAT62... Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 BAT62-02L BAT62-02W BAT62-03W 3 D 2 BAT62-07W BAT62-07L4 4 3 BAT62-08S BAT62-09S 4 D 1 6 5 4 6 5.
08S, -09S, TS ≤ 105 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W BAT62-07W BAT62-08S BAT62-09S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse cur.