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BAT68-04W Datasheet

The BAT68-04W is a Silicon Schottky Diode. Download the datasheet PDF and view key features and specifications below.

Part NumberBAT68-04W
ManufacturerKexin Semiconductor
Overview SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Diodes Features For mixer applications in VHF/UHF range For high-speed switching application Absolute Maxim um Ratings Ta = 25 P aram . For mixer applications in VHF/UHF range For high-speed switching application Absolute Maxim um Ratings Ta = 25 P aram eter Sym bol Value Diode reverse voltage VR 8 Forward current IF 130 Total power dissipation TS 92 P tot 150 Junction temperature Tj 150 Storage temperature Tstg .
Part NumberBAT68-04W
DescriptionSilicon Schottky Diodes
ManufacturerInfineon
Overview Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-free (RoHS compliant) package BAT68... BAT68 !  BAT68-04 BAT68-04W ! , ,  BA. Junction - soldering point1) BAT68 BAT68-04, BAT68-06 BAT68-04W-BAT68-06W, BAT68-08S BAT68-07W Symbol RthJS Value 8 130 150 150 150 150 150 -55
* 150 Value ≤ 490 ≤ 590 ≤ 390 ≤ 410 Unit V mA mW °C Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol .
Part NumberBAT68-04W
DescriptionSilicon Schottky Diodes
ManufacturerSiemens Semiconductor Group
Overview BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type BAT 68-04W BAT 68-05W BAT 68-06W BAT 6. Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 8 318 390 - V µA 0.1 1.2 mV 340 340 500 pF 1 Ω 10 I(BR) = 100 µA Reverse current IR VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C Forward voltag.

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