BAW100 Datasheet and Specifications PDF

The BAW100 is a SILICON SWITCHING DIODES.

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Part NumberBAW100 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is desig. NS MIN MAX IR VR=25V, TA=150°C 30 IR VR=75V 1.0 IR VR=75V, TA=150°C 50 BVR IR=100μA 85 VF IF=1.0mA 715 VF IF=10mA 855 VF IF=50mA 1.00 VF IF=150mA 1.25 CJ VR=0, f=1.0MHz 2.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 6.0 UNITS V V mA mA A A A mW °C °C/W UNITS μA μA μA V mV mV.
Part NumberBAW100 Datasheet
DescriptionSilicon Switching Diode Array
ManufacturerSiemens Group
Overview Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAW 100 Type BAW 100 Marking JSs Ordering Code (tape and reel) Q62702-A376 Pin Configuration Package1) SO. V, TA = 150 ˚C VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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* 2 6 pF ns V(BR) VF
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* IR
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* 1 30 50
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* 715 855 1000 1.
Part NumberBAW100 Datasheet
DescriptionSilicon Switching Diode Array
ManufacturerKexin Semiconductor
Overview SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve r. For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o ta l p o w e r d is s ip a tio n , T S = 3 1 J u n c tio .

Similar Datasheets

Part Number Manufacturer Description
BAW100G Central Semiconductor SILICON SWITCHING DIODES