BC238 Datasheet
BC238 Datasheet (Continental Device India)
Continental Device India
SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissip.
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BC238 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : B.
.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA VCE=5V, IC=10mA Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 CCBO CEBO NF NF VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2kohm VCE=5V, IC=0.2mA RG.
BC238 Datasheet (KEC)
KEC
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz.
High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 Collector-Base Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-.
BC238 Datasheet (SEMTECH)
SEMTECH
BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute .
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