| Part Number | BC338 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
BC337 / BC338 — NPN Epitaxial Silicon Transistor
September 2015
BC337 / BC338 NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications • Suitable for AF-Driver Stages and Lo.
* Switching and Amplifier Applications * Suitable for AF-Driver Stages and Low-Power Output Stages * Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo Packing Part Number BC33716BU BC33716TA BC. |
BC338 Datasheet
The BC338 is a NPN Epitaxial Silicon Transistor.
| Part Number | BC338 |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | SEMTECH |
| Overview | BC337…BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. Absolut. = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at VCE = 1 V, IC = 300 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capaci. |
| Part Number | BC338 |
|---|---|
| Description | Amplifier Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
BC337,-16,-25,-40 BC338,-16,-25,-40
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
.
tter Breakdown Voltage (IC = 100 µA, IE = 0)
BC337 BC338
V(BR)CES
Emitter * Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC =. |
| Part Number | BC338 |
|---|---|
| Description | Small Signal Transistors |
| Manufacturer | General Semiconductor |
| Overview |
BC337, BC338
Small Signal Transistors (NPN)
TO-92
.181 (4.6)
.142 (3.6)
min..492 (12.5) .181 (4.6)
max.∅ .022 (0.55) .098 (2.5)
CE B
Dimensions in inches and (millimeters)
FEATURES
♦ NPN Silicon .
* NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. * These types are also available subdi- vided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, th. |