| Part Number | BC517 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from proc. at) VBE(on) Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Conditions IC = 2.0mA, IB = 0 IC = 10µA, IE = 0 IE = 100nA, IC = 0 VCB = 30V, IE = 0 VCE = 2.0V, IC = 20mA IC = 10. |
BC517 Datasheet
The BC517 is a NPN Darlington Transistor.
| Part Number | BC517 |
|---|---|
| Description | NPN Darlington Transistor |
| Manufacturer | onsemi |
| Overview |
98AON13879G
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3.
* This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A * Sourced from Process 05 * This is a Pb *Free Device 1 2 3 1. Collector 2. Base 3. Emitter TO *92 3 4.825x4.76 LEADFORMER CASE 135AR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (N. |
| Part Number | BC517 |
|---|---|
| Description | NPN Silicon Darlington Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | NPN Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 516 (PNP) BC 517 BC 517 2 3 11 Type BC 517 Marking – Ordering Code Q62702-C825 Pin Configur. llector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter volta. |
| Part Number | BC517 |
|---|---|
| Description | Darlington Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document by BC517/D
BC517
COLLECTOR 1
BASE 2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector –.
oltage (IE = 100 nAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 10 Vdc, IC = 0)
V(BR)CES V(BR)CBO V(BR)EBO
ICES ICBO IEBO
1 23
CASE 29 *04, STYLE 17 TO *92 (TO *226AA) Min Typ Max Unit 30 * * Vdc 40 * * Vdc 10 * * Vd. |