| Part Number | BC808 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
BC807 / BC808 — PNP Epitaxial Silicon Transistor
November 2014
BC807 / BC808 PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low.
* Switching and Amplifier Applications * Suitable for AF-Driver Stages and Low Power Output Stages * Complement to BC817 / BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number BC80716MTF BC80725MTF BC80740MTF BC80840MTF Marking 9FA 9FB 9FC 9GC Package SOT-23 3L SOT. |
BC808 Datasheet
The BC808 is a PNP Epitaxial Silicon Transistor.
| Part Number | BC808 |
|---|---|
| Description | PNP Silicon Transistor |
| Manufacturer | Kodenshi AUK Group |
| Overview |
• High current application • Switching application
Features
• Suitable for AF-Driver stage and low power output stages • Complementary pair with BC818
Ordering Information
Type NO. BC808 Marking MA.
* Suitable for AF-Driver stage and low power output stages * Complementary pair with BC818 Ordering Information Type NO. BC808 Marking MA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0~0.1 KST-202. |
| Part Number | BC808 |
|---|---|
| Description | Surface mount Si-Epitaxial PlanarTransistors |
| Manufacturer | Diotec Semiconductor |
| Overview |
BC807 / BC808
BC807 / BC808
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2015-05-12
2.9 ±0.1
0.4+0.1 -0.05
.
schichttemperatur Storage temperature * Lagerungstemperatur E-B short B open C open - VCES - VCEO - VEBO Ptot - IC - ICM IEM - IBM Tj TS Grenzwerte (TA = 25°C) BC807 BC808 50 V 30 V 45 V 25 V 5V 310 mW 1) 800 mA 1A 1A 200 mA -55 *+150°C -55…+150°C Characteristics (Tj = 25°C) DC cu. |
| Part Number | BC808 |
|---|---|
| Description | Small Signal Transistors |
| Manufacturer | General Semiconductor |
| Overview | . . |