| Overview |
BC856T
PNP Silicon AF Transistor Preliminary data
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T
3
2 1
VP.
= 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = .
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