BC860 Datasheet
BC860 Datasheet (LGE)
LGE
Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -.
Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Paramet.
BC860 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film c.
* Switching and Amplifier Applications
* Suitable for automatic insertion in thick and thin-film circuits
* Low Noise: BC859, BC860
* Complement to BC846
* BC850
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BC856 : BC857/860 : BC85.
BC860 Datasheet (NXP Semiconductors)
NXP Semiconductors
DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. handbook, halfpage 3 3 MARKING TYPE NUMBER BC859B BC859C MARKING CODE(1) 4B* 4C* TYPE NUMBER BC860B BC8.
* Low current (max. 100 mA)
* Low voltage (max. 45 V).
APPLICATIONS
* Low noise input stages of audio frequency equipment.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850.
handbook, halfpage
3
3
MARK.
BC860 Datasheet (KEC)
KEC
SEMICONDUCTOR TECHNICAL DATA BC859/860 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. For Complementary with NPN Type BC849/850 MAXIMUM RATING (Ta=25 ) CHARACT.
R)CBO V(BR)EBO ICBO hFE VBE(ON) 1 VBE(ON) 2 VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 fT Cob NF Note : hFE Classification A:125 250, B:220 475 IC=-10 A, IE=0 IE=-10 A, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5.