BCF30 Datasheet and Specifications PDF

SMD Type TransistIoCrs PNP General Purpose Transistors BCF29,BCF30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -.

Low current (max. 100 mA). Low voltage (max. 32 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -32 V Emitter-base vol.

BCF 29, BFC 30 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Ver.

/C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ.
*
*
* 80 mV 150 mV Max. 100 nA 10 :A 100 nA 300 mV
* Characteristics (Tj = 25/C) Collector-Base cutoff current
* Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 100/C.

3 3 1 2 1 2 MAM256 DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCF32 and BCF33. MARKING TYPE NUMBER BCF29 BCF30 MARKING CODE C7p C8p Top view Fig.1 Simplified outline (S.

* Low current (max. 100 mA)
* Low voltage (max. 32 V). APPLICATIONS
* Low level, low noise general purpose applications in thick and thin-film circuits. handbook, halfpage BCF29; BCF30 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 DESCRIPTION PNP transistor in a SOT23 pl.