BCF81 Datasheet and Specifications PDF

SMD Type TransistIoCrs NPN General Purpose Transistors BCF81 Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1..

Low current (max. 100 mA). Low voltage (max. 45 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base volta.

3 3 1 2 DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING 1 2 MAM255 TYPE NUMBER BCF81 MARKING CODE K9p Top view Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SY.

* Low current (max. 100 mA)
* Low voltage (max. 45 V). APPLICATIONS
* Low level, low noise general purpose applications in thick and thin-film circuits. handbook, halfpage BCF81 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 DESCRIPTION NPN transistor in a SOT23 plastic package. MAR.

BCF 81 NPN General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung .

5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current
* Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C Emitter-Base cutoff current
* Emitterreststrom IC = 0, VEB = 5 V VCE = 5 V, IC = 2 mA IEB0 hFE
* 420 ICB0 ICB0 .