| Part Number | BCV28 Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV29
2. Features and benefits
• Very high DC current gain (min. 20000) • High cur.
and benefits
* Very high DC current gain (min. 20000) * High current (max. 500 mA) * Low voltage (max. 30 V) * AEC-Q101 qualified 3. Applications * Applications, where very high amplification is required 4. Quick reference data Table 1. Quick reference data Symbol Parameter IC collector curre. |
BCV28 Datasheet and Specifications PDF
The BCV28 is a PNP Darlington transistors.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | BCV28 Datasheet |
|---|---|
| Description | PNP Silicon Darlington Transistors |
| Manufacturer | Infineon |
| Overview | PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV29, BCV49 (NPN) • Pb-free (RoHS compliant) package • Qualified a. TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV28 IC = 10 mA, IB = 0 , BCV48 V(BR)CEO 30 60 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV28 IC = 100 µA, IE = 0 , B. |