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BCV28 - PNP Darlington transistors

General Description

PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Very high DC current gain (min. 20000).
  • High current (max. 500 mA).
  • Low voltage (max. 30 V).
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCV28 PNP Darlington transistor 13 April 2023 Product data sheet 1. General description PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV29 2. Features and benefits • Very high DC current gain (min. 20000) • High current (max. 500 mA) • Low voltage (max. 30 V) • AEC-Q101 qualified 3. Applications • Applications, where very high amplification is required 4. Quick reference data Table 1. Quick reference data Symbol Parameter IC collector current hFE DC current gain Conditions VCE = -5 V; IC = -1 mA; Tamb = 25 °C Min Typ Max Unit - - -500 mA 4000 - - 5. Pinning information Table 2.