| Part Number | BCV29 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified a. TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V(BR)CEO 30 60 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , B. |
BCV29 Datasheet and Specifications PDF
The BCV29 is a NPN Silicon Darlington Transistors.
Key Specifications
| Pins | 3 |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | BCV29 Datasheet |
|---|---|
| Description | NPN Darlington transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.
1 2 3
handbook, halfpage
BCV29; BCV49
PINNING PIN 1 2 3 emitter collector base DESCR.
* High current (max. 500 mA) * Low voltage (max. 60 V) * High DC current gain (min. 20000). APPLICATIONS * Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. 1 2 3 handbook, halfpage BCV29; . |