| Overview |
PNP Silicon Darlington Transistors
• For general AF applications • High collector current • High current gain • Complementary types: BCV29, BCV49 (NPN) • Pb-free (RoHS compliant) package • Qualified a.
TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV28 IC = 10 mA, IB = 0 , BCV48
V(BR)CEO
30 60
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV28 IC = 100 µA, IE = 0 , B.
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