BCW60B Datasheet and Specifications PDF

The BCW60B is a NPN Silicon AF Transistors.

Key Specifications

PackageSOT-23
Mount TypeSurface Mount
Pins3
Max Frequency250 MHz
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBCW60B Datasheet
ManufacturerInfineon
Overview NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW6. ature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 32 45 32 45 6 100 200 200 330 150 -65
* 150 Value ≤ 240 Unit V mA mW °C Unit K/W 2 2007-04-20 BCW.
Part NumberBCW60B Datasheet
DescriptionNPN General Purpose Amplifier
ManufacturerGalaxy Microelectronics
Overview NPN General Purpose Amplifier FEATURES  Low current  Low voltage  RoHS compliant with Halogen-free Product Specification BCW60 APPLICATIONS  General purpose medium power amplifier  Switching ap.
* Low current
* Low voltage
* RoHS compliant with Halogen-free Product Specification BCW60 APPLICATIONS
* General purpose medium power amplifier
* Switching appilication ORDERING INFORMATION Type No. BCW60A BCW60B BCW60C BCW60D Marking AA AB AC AD SOT-23 Package Code SOT-23 SOT-23 SOT-23 SOT-23.
Part NumberBCW60B Datasheet
DescriptionNPN Silicon AF Transistors
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Compleme. t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150
* 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electric.
Part NumberBCW60B Datasheet
DescriptionTransistor
ManufacturerFairchild Semiconductor
Overview BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collecto. F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA VCE=5V, IC=2mA VCB=10V, .

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