| Part Number | BCW61C |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BCW61B series devices are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise ap. Cob VCB=10V, IE=0, f=1.0MHz NF VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz ton VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA toff VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 150 800 BCW61B BCW61C MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA 30 40 h. |
BCW61C Datasheet
The BCW61C is a SURFACE MOUNT SILICON PNP TRANSISTORS.
| Part Number | BCW61C |
|---|---|
| Description | PNP general purpose transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗
Top .
* Low current (max. 100 mA) * Low voltage (max. 32 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKI. |
| Part Number | BCW61C |
|---|---|
| Description | Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol . Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz NF Noise Figure tON Tu. |
| Part Number | BCW61C |
|---|---|
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW61A BCW61B BCW61C BCW61D
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon tr.
r *base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature *VCES *VCE0 *VEB0 *IC *lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW *55 to +150 °C max. 150 ° C THERMAL RES. |