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BCW65B Datasheet

The BCW65B is a NPN Silicon AF Transistors. Download the datasheet PDF and view key features and specifications below.

Part NumberBCW65B
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 6. t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC.
Part NumberBCW65B
DescriptionNPN Silicon AF Transistor
ManufacturerInfineon
Overview BCW65, BCW66 NPN Silicon AF Transistor  For general AF applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW. at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45.
Part NumberBCW65B
DescriptionSILICON NPN TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpos. , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20.
Part NumberBCW65B
DescriptionSurface mount Si-Epitaxial PlanarTransistors
ManufacturerDiotec Semiconductor
Overview BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.. = 25/C) BCW 65 32 V 60 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65…+ 150/C BCW 66 45 V 75 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current
* Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C IC = 0, VEB .

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