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BCW67A Datasheet

The BCW67A is a SILICON PNP TRANSISTORS. Download the datasheet PDF and view key features and specifications below.

Part NumberBCW67A
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose . T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 45 60 32 45 5.0 200.
Part NumberBCW67A
DescriptionPNP Transistor
ManufacturerInfineon
Overview PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Quali. S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics .
Part NumberBCW67A
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerGalaxy Microelectronics
Overview PNP Silicon Epitaxial Planar Transistor BCW67 Features  Complimentary to TBCW65  High collector current  High current gain  Low collector-emitter saturation voltage Mechanic al Data  Case: SOT-2.
* Complimentary to TBCW65
* High collector current
* High current gain
* Low collector-emitter saturation voltage Mechanic al Data
* Case: SOT-23
* Molding compound: UL flammability classification rating 94V-0
* Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering Info.
Part NumberBCW67A
DescriptionPNP Silicon AF Transistors
ManufacturerSiemens Semiconductor Group
Overview PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 6. t V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC.

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