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BD132 Datasheet

The BD132 is a SILICON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part NumberBD132
ManufacturerSavantIC
Overview ·Complement to type BD131 ·With TO-126 package ·High current (Max:- 3A) ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;co. ransistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A VCB=-50V;.
Part NumberBD132
DescriptionSILICON PLANAR EPITAXIAL POWER TRANSISTORS
ManufacturerComset Semiconductors
Overview PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132 are PNP transistors mounted in Jedec TO-126 plastic package. Medium power applications. PNP complements are BD131 Compliance to RoHS. AB. r cut-offcurrent IC=0, -VEB=3 V Collector-Emitter saturation -IC=0.5 A, -IB=50 mA Voltage -IC=2.0 A, -IB=200 mA -IC=0.5 A, -IB=50 mA Base-Emitter saturation Voltage -IC=2.0 A, -IB=200 mA -VCE=12 V, -IC=500m A DC Current Gain -VCE=1 V, -IC=2 A 18/10/2012 COMSET SEMICONDUCTORS 1|2 Datasheet pdf - .
Part NumberBD132
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot var. TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat)-2 Base-Emitter Satura.

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