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BD177 Datasheet

The BD177 is a (BD175 - BD179) SILICON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part NumberBD177
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type BD176/178 /180 APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base. ltage BD177 BD179 BD175 ICBO Collector cut-off current BD177 BD179 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VEB=5V; IC=0 IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=250mA; VCE=10V IC=0.1A; IB=0 CONDITIONS IC=1A.
Part NumberBD177
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD178 ·Minimum Lot-to-Lot variations for robust device performance and. ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V ICBO Collector Cutoff Current.
Part NumberBD177
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Abso. 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Produc.
Part NumberBD177
DescriptionEPITAXIAL SILICON POWER TRANSISTORS
ManufacturerContinental Device India
Overview Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and. .

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BD177 TRANSYS EPITAXIAL SILICON POWER TRANSISTORS