| Part Number | BD235 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is .
* Low saturation voltage * NPN transistors Applications * Audio, power linear and switching applications Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.. |
BD235 Datasheet and Specifications PDF
The BD235 is a Low voltage NPN power transistors.
Key Specifications
| Package | SOT-32 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Frequency | 3 MHz |
| Height | 10.8 mm |
| Length | 7.8 mm |
| Width | 2.7 mm |
| Max Operating Temp | 150 °C |
| Part Number | BD235 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Abso. n Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA 3 40 25 0.6 1.3 V V MHz 100 100 100 1 µA µA µA mA Test Conditio. |
| Part Number | BD235 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | JCET |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD233/235/237 TRANSISTOR (NPN)
FEATURES Complement to BD234/236/238 respectively
TO-126
MAXIMUM RATINGS (Ta.
Complement to BD234/236/238 respectively
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO IC PC PC RΘJA
Collector-Base Voltage Collector-Emitter Voltage
BD233 BD235 BD237
BD233 BD235 BD237
Emitter-Base Voltage
Collector Current *Continuous . |
| Part Number | BD235 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~1. isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYM. |