| Part Number | BD239B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Rat. *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 0.2A VCE = 4V, IC = 1A 40 15 0.7 1.3 V V 0.2 0.2 0.2 0.2 1 mA mA mA mA mA . |
BD239B Datasheet PDF
The BD239B is a NPN Transistor.
| Part Number | BD239B Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | With TO-220C package ·Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION A. C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL . |
| Part Number | BD239B Datasheet |
|---|---|
| Description | Medium Power Linear/Switching |
| Manufacturer | Comset Semiconductors |
| Overview |
NPN BD239 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in m.
/10/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BD239 * A * B * C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=30 V VCE=30 V VCE=60 V VCE=60 V Min 45 60 80 100 40 Typ - Max Unit ICEO IEBO ICES VCEO(s. |
| Part Number | BD239B Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTORS |
| Manufacturer | Bourns |
| Overview | BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 4 A Peak Collec. 239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 2 A 4 A 0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 15. |