| Part Number | BD240 Datasheet |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview |
PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in m.
°C/W °C/W
22/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf -
PNP BD240 * A * B * C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V Min -45 -60 -80 -100 40 Typ - Max Unit IC. |
BD240 Datasheet and Specifications PDF
The BD240 is a Medium Power Linear/Switching.
| Part Number | BD240 Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Max. . - 45 - 60 - 80 - 100 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 -1 40 15 - 0.7 - 1.3 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V,IC =. |
| Part Number | BD240 Datasheet |
|---|---|
| Description | PNP PLASTIC POWER TRANSISTOR |
| Manufacturer | Continental Device India |
| Overview | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239, 239A, 239B, 239C . (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 239 239A 239B 239C 240 240A 240B 240C max. 55 70 90 115 V max. 45 60 80 100 V max. 2.0 A max. 30 W max.. |
| Part Number | BD240 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain -hFE = 40(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD240; -60V(Min)- BD240A -80V(Min)- BD240B; -100V(Min)- BD240C ·Complement to Type BD239/A/B/. , Junction to Case isc website： MAX UNIT 4.17 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD240/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD240 VCEO(SUS) Collector-Emitter Sustaining Volta. |