BD241A Datasheet and Specifications PDF

The BD241A is a NPN Epitaxial Silicon Transistor.

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Part NumberBD241A Datasheet
ManufacturerFairchild Semiconductor
Overview BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maxi. 3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 0.6A VCE = 4V, IC = 3A I.
Part NumberBD241A Datasheet
DescriptionNPN power transistors
ManufacturerSTMicroelectronics
Overview The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types ar.
* NPN transistors Applications
* Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type.
Part NumberBD241A Datasheet
DescriptionNPN SILICON POWER TRANSISTORS
ManufacturerBourns
Overview BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collec. 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°.
Part NumberBD241A Datasheet
DescriptionSilicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-220C package ·Complement to type BD242/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitte. ning voltage BD241A BD241B IC=30mA; IB=0 BD241C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=3A;IB=0.6 A Base-emitter on voltage IC=3A ; VCE=4V Collector cut-off current BD241/A VCE=30V; IB=0 BD241B/C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 Collector cut-off .