The BD535 is a NPN Epitaxial Silicon Transistor.
| Package | LSSOP |
|---|---|
| Mount Type | Surface Mount |
| Pins | 5 |
| Operating Voltage | 1.2 V |
| Max Voltage (typical range) | 6.5 V |
| Min Voltage (typical range) | 950 mV |
| Output Type (varies by manufacturer) | CMOS |
| Length | 2.9 mm |
| Part Number | BD535 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial . : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 . |
| Part Number | BD535 Datasheet |
|---|---|
| Description | Complementary power transistors |
| Manufacturer | STMicroelectronics |
| Overview |
t(sThe devices are manufactured in Planar ctechnology with “Base Island” layout. The duresulting transistor shows exceptional high gain roperformance coupled with very low saturation Obsolete Product(.
.
* BD533, BD535, and BD537 are NPN transistors )Description t(sThe devices are manufactured in Planar ctechnology with “Base Island” layout. The duresulting transistor shows exceptional high gain roperformance coupled with very low saturation Obsolete Product(s) - Obsolete Pvoltage. The PNP type. |
| Part Number | BD535 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD536 ·Minimum Lot-to-Lot variations for robust device performance and reliable. Power Transistor BD535 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Voltage Saturation IC= 2A; IB= 0.2A VCE(sat)-2 Collector-Emitter Voltage Saturat. |
| Part Number | BD535 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| CoreStaff | 2980 | 1+ : 0.09 USD 10+ : 0.088 USD 50+ : 0.086 USD 100+ : 0.084 USD |
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| Verical | 2980 | 596+ : 0.1269 USD 1000+ : 0.1228 USD 2500+ : 0.1191 USD |
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| DigiKey | 2950 | 1+ : 0.45 USD 10+ : 0.312 USD 25+ : 0.2784 USD 100+ : 0.2414 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BD5355 | ROHM | Free Delay Time Setting CMOS Voltage Detector |
| BD5353 | ROHM | Free Delay Time Setting CMOS Voltage Detector |
| BD5351 | ROHM | Free Delay Time Setting CMOS Voltage Detector |
| BD5350 | ROHM | Free Delay Time Setting CMOS Voltage Detector |
| BD5356 | ROHM | Free Delay Time Setting CMOS Voltage Detector |
| BD5350-2M | ROHM | CMOS Voltage Detector |
| BD535 | SavantIC | POWER TRANSISTOR |